The author presents all aspects in theory and experiments of nanoelectronic devices starting
from field-effect transistors and leading to alternative device concepts such as
Schottky-barrier MOSFETs and band-to-band tunnel FETs. Latest advances in Nanoelectronics as
ultralow power nanoscale devices and the realization of silicon MOS spin qubits are discussed
and finally a brief introduction into device simulations is given as well.
