This book presents the Einstein Relation(ER) in two-dimensional (2-D) Heavily Doped (HD)
Quantized Structures. The materials considered are quantized structures of HD non-linear
optical III-V II-VI Ge Te Platinum Antimonide stressed materials GaP Gallium Antimonide
II-V Bismuth Telluride together with various types of HD superlattices and their Quantized
counterparts respectively. The ER in HD opto-electronic materials and their nanostructures is
studied in the presence of strong light waves and intense electric fields on the basis of newly
formulated electron dispersion laws that control the studies of such quantum effect devices.
The suggestion for the experimental determination of HD 2D and 3D ERs and the importance of
measurement of band gap in HD optoelectronic materials under intense built-in electric field in
nanodevices and strong external photo excitation (for measuring photon induced physical
properties) are also discussed in this context. The influence of crossed electric and
quantizing magnetic fields on the ER of the different 2D HD quantized structures (quantum wells
inversion and accumulation layers quantum well HD superlattices and nipi structures) under
different physical conditions is discussed in detail. This monograph contains 100 open research
problems which form the integral part of the text and are useful for both Ph.D aspirants and
researchers in the fields of condensed matter physics solid-state sciences materials science
nano-science and technology and allied fields.
