This book deals with the Effective Electron Mass (EEM) in low dimensional semiconductors. The
materials considered are quantum confined non-linear optical III-V II-VI GaP Ge PtSb2
zero-gap stressed Bismuth carbon nanotubes GaSb IV-VI Te II-V Bi2Te3 Sb III-V II-VI
IV-VI semiconductors and quantized III-V II-VI IV-VI and HgTe CdTe superlattices with graded
interfaces and effective mass superlattices. The presence of intense electric field and the
light waves change the band structure of optoelectronic semiconductors in fundamental ways
which have also been incorporated in the study of the EEM in quantized structures of
optoelectronic compounds that control the studies of the quantum effect devices under strong
fields. The importance of measurement of band gap in optoelectronic materials under strong
electric field and external photo excitation has also been discussed in this context. The
influence of crossed electric and quantizing magnetic fields on the EEM and the EEM in heavily
doped semiconductors and their nanostructures is discussed. This book contains 200 open
research problems which form the integral part of the text and are useful for both Ph. D
aspirants and researchers in the fields of solid-state sciences materials science nanoscience
and technology and allied fields in addition to the graduate courses in modern semiconductor
nanostructures. The book is written for post graduate students researchers and engineers
professionals in the fields of solid state sciences materials science nanoscience and
technology nanostructured materials and condensed matter physics.
