Within this thesis fabrication processes for high-quality Josephson junctions based on niobium
and aluminum oxide as well as niobium nitride and aluminum nitride on various substrates are
discussed. Techniques for achieving a planar chip topography and sub-µm lateral dimensions
aiding the realization of sophisticated Josephson devices such as SQUIDs flux-flow oscillators
and long Josephson junctions with artificial phase discontinuities are presented in detail.
