This book primarily focuses on the radiation effects and compact model of silicon-germanium
(SiGe) heterojunction bipolar transistors (HBTs). It introduces the small-signal equivalent
circuit of SiGe HBTs including the distributed effects and proposes a novel direct analytical
extraction technique based on non-linear rational function fitting. It also presents the total
dose effects irradiated by gamma rays and heavy ions as well as the single-event transient
induced by pulse laser microbeams. It offers readers essential information on the irradiation
effects technique and the SiGe HBTs model using that technique.
