This book explores the impacts of important material parameters on the electrical properties of
indium arsenide (InAs) nanowires which offer a promising channel material for low-power
electronic devices due to their small bandgap and high electron mobility. Smaller diameter
nanowires are needed in order to scale down electronic devices and improve their performance.
However to date the properties of thin InAs nanowires and their sensitivity to various factors
were not known. The book presents the first study of ultrathin InAs nanowires with diameters
below 10 nm are studied for the first time establishing the channel in field-effect
transistors (FETs) and the correlation between nanowire diameter and device performance.
Moreover it develops a novel method for directly correlating the atomic-level structure with
the properties of individual nanowires and their device performance. Using this method the
electronic properties of InAs nanowires and the performance of the FETs they are used in are
found to change with the crystal phases (wurtzite zinc-blend or a mix phase) the axis
direction and the growth method. These findings deepen our understanding of InAs nanowires and
provide a potential way to tailor device performance by controlling the relevant parameters of
the nanowires and devices.
