This book highlights the origin of low external quantum efficiency for deep ultraviolet
light-emitting diodes (DUV LEDs). In addition it puts forward solutions for increasing the
internal quantum efficiency and the light extraction efficiency of DUV LEDs. The book chiefly
concentrates on approaches that can be used to improve the crystalline quality increase
carrier injection reduce the polarization-induced electric field within multiple quantum wells
suppress the TM polarization emission and enhance the light escape from the semiconductor
layer. It also demonstrates insightful device physics for DUV LEDs which will greatly benefit
the optoelectronic community.
