EAN: 9783031009006

SYNTHESIS LECTURES ON EMERGING ENGINEERING TECH...

Ever since its invention in the 1980s  the compound semiconductor heterojunction-based high
electron mobility transistor (HEMT) has been widely used in radio frequency (RF) applications.
This book provides readers with broad coverage on techniques and new trends of HEMT  employing
leading compound semiconductors  III-N and III-V materials. The content includes an overview of
GaN HEMT device-scaling technologies and experimental research breakthroughs in fabricating
various GaN MOSHEMT transistors. Readers are offered an inspiring example of monolithic
integration of HEMT with LEDs  too. The authors compile the most relevant aspects of III-V HEMT
including the current status of state-of-art HEMTs  their possibility of replacing the Si CMOS
transistor channel  and growth opportunities of III-V materials on an Si substrate. With
detailed exploration and explanations  the book is a helpful source suitable for anyone
learning about and working on compound semiconductor devices.

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