EAN: 9783031013782

SYNTHESIS LECTURES ON POWER ELECTRONICS TRANS...

This book presents physics-based electro-thermal models of bipolar power semiconductor devices
including their packages  and describes their implementation in MATLAB and Simulink. It is a
continuation of our first book Modeling of Bipolar Power Semiconductor Devices. The device
electrical models are developed by subdividing the devices into different regions and the
operations in each region  along with the interactions at the interfaces  are analyzed using
the basic semiconductor physics equations that govern device behavior. The Fourier series
solution is used to solve the ambipolar diffusion equation in the lightly doped drift region of
the devices. In addition to the external electrical characteristics  internal physical and
electrical information  such as junction voltages and carrier distribution in different regions
of the device  can be obtained using the models. The instantaneous dissipated power  calculated
using the electrical device models  serves as input to the thermal model (RC network with
constant and nonconstant thermal resistance and thermal heat capacity  or Fourier thermal
model) of the entire module or package  which computes the junction temperature of the device.
Once an updated junction temperature is calculated  the temperature-dependent semiconductor
material parameters are re-calculated and used with the device electrical model in the next
time-step of the simulation. The physics-based electro-thermal models can be used for
optimizing device and package design and also for validating extracted parameters of the
devices. The thermal model can be used alone for monitoring the junction temperature of a power
semiconductor device  and the resulting simulation results used as an indicator of the health
and reliability of the semiconductor power device.

Aktuelle Preise zur EAN 9783031013782

Produktinformationen zur 9783031013782