EAN: 9783031014246

SYNTHESIS LECTURES ON SOLID STATE MATERIALS AND...

In this work  the reliability of HfO2 (hafnium oxide) with poly gate and dual metal gate
electrode (Ru-Ta alloy  Ru) was investigated. Hard breakdown and soft breakdown  particularly
the Weibull slopes  were studied under constant voltage stress. Dynamic stressing has also been
used. It was found that the combination of trapping and detrapping contributed to the
enhancement of the projected lifetime. The results from the polarity dependence studies showed
that the substrate injection exhibited a shorter projected lifetime and worse soft breakdown
behavior  compared to the gate injection. The origin of soft breakdown (first breakdown) was
studied and the results suggested that the soft breakdown may be due to one layer breakdown in
the bilayer structure (HfO2 SiO2: 4 nm 4 nm). Low Weibull slope was in part attributed to the
lower barrier height of HfO2 at the interface layer. Interface layer optimization was conducted
in terms of mobility  swing  and short channel effect using deep submicron MOSFET devices.

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