This book describes analytical compact transistor models that can be used in circuit simulation
programs like SPICE. It provides the reader with a thorough knowledge of many aspects of
compact models. The book starts with the necessary device physics: Boltzmann transport equation
continuity equation Poisson equation and physical modelling of mobility recombination
bandgap narrowing avalanche multiplication and noise. Then a systematic treatment of the
analytical formulas that describe the device behaviour in d.c. a.c. and transient situations
is given for both bipolar and MOST devices. The book contains complete sets of model equations
for various models including some new ones and special attention is paid to the numerical
problems of analytical continuity. Separate chapters are devoted to parameter determination
the parameter temperature dependence as well as their relation to process variables the
statistical correlations between parameters the scaling rules for submicron devices the side
wall effects and the parasitics. The book thus contains all the relevant aspects of compact
transistor modelling for integrated circuit design and serves as a state-of-the-art description
in compact modelling.
