Ion implantation offers one of the best examples of a topic that starting from the basic
research level has reached the high technology level within the framework of microelectronics.
As the major or the unique procedure to selectively dope semiconductor materials for device
fabrication ion implantation takes advantage of the tremendous development of microelectronics
and it evolves in a multidisciplinary frame. Physicists chemists materials sci entists
processing device production device design and ion beam engineers are all involved in this
subject. The present monography deals with several aspects of ion implantation. The first
chapter covers basic information on the physics of devices together with a brief description of
the main trends in the field. The second chapter is devoted to ion im planters including also
high energy apparatus and a description of wafer charging and contaminants. Yield is a quite
relevant is sue in the industrial surrounding and must be also discussed in the academic
ambient. The slowing down of ions is treated in the third chapter both analytically and by
numerical simulation meth ods. Channeling implants are described in some details in view of
their relevance at the zero degree implants and of the available industrial parallel beam
systems. Damage and its annealing are the key processes in ion implantation. Chapter four and
five are dedicated to this extremely important subject.
